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Si photonics has made rapid progress in research and commercialization in the past two decades. While it started with electronic–photonic integration on Si to overcome the interconnect bottleneck in data communications, Si photonics has now greatly expanded into optical sensing, light detection and ranging (LiDAR), optical computing, and microwave/RF photonics applications. From an applied physics point of view, this perspective discusses novel materials and integration schemes of active Si photonics devices for a broad range of applications in data communications, spectrally extended complementary metal–oxide–semiconductor (CMOS) image sensing, as well as 3D imaging for LiDAR systems. We also present a brief outlook of future synergy between Si photonic integrated circuits and Si CMOS image sensors toward ultrahigh capacity optical I/O, ultrafast imaging systems, and ultrahigh sensitivity lab-on-chip molecular biosensing. 

Abstract Incorporation of colloidal quantum emitters into silicon-based photonic devices would enable major advances in quantum optics. However, deterministic placement of individual sub-10 nm colloidal particles onto micron-sized photonic structures with nanometer-scale precision remains an outstanding challenge. Here, we introduce Cavity-Shape Modulated Origami Placement (CSMOP) that leverages the structural programmability of DNA origami to precisely deposit colloidal nanomaterials within lithographically-defined resist cavities. CSMOP enables clean and accurate patterning of origami templates onto photonic chips with high yields. Soft-silicification-passivation stabilizes deposited origamis, while preserving their binding sites to attach and align colloidal quantum rods (QRs) to control their nanoscale positions and emission polarization. We demonstrate QR integration with photonic device structures including waveguides, micro-ring resonators, and bullseye photonic cavities. CSMOP therefore offers a general platform for the integration of colloidal quantum materials into photonic circuits, with broad potential to empower quantum science and technology. 

Phase change materials (PCMs) are important building blocks in solid-state memory and photonic devices. Solution-based processing promises large-area, cost-effective, conformal coating of optical PCMs (O-PCMs) for photonic applications. In this work, a solution processing route was developed for Ge₂Sb₂Se₄Te₁(GSST), a target PCM of interest due to its large optical contrast, broadband transparency, and improved glass-forming capability. An alkahest solvent mixture of ethanedithiol and ethylenediamine was used as a solvent system to fabricate solution-derived GSST thin films and films from these solutions were prepared and characterized using SEM, XRD, and Raman spectroscopy. 

Optical Coherence Tomography (OCT) is limited by cost and size. We've developed a compact, chip-integrated OCT system with a spectrometer, delay line, and beam scanning. It features a 1310nm central wavelength, 100nm bandwidth, 0.0977nm resolution, 108.45dB sensitivity, and 8.8µm axial resolution. 

The development of functional chalcogenide optical phase change materials holds significant promise for advancing optics and photonics applications. Our comprehensive investigation into the solution processing of Sb2Se3 thin films presents a systematic approach from solvent exploration to substrate coating through drop-casting methods and heat treatments. By employing characterization techniques such as scanning electron microscopy, dynamic light scattering, energy-dispersive X-ray spectroscopy, Raman spectroscopy, and X-ray diffraction, we reveal crucial insights into the structural, compositional, and morphological properties of the films as well as demonstrated techniques for control over these features to ensure requisite optical quality. Our findings, compared with currently reported deposition techniques, highlight the potential of solution deposition as a route for scalable Sb2Se3 film processing.